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MRF148 Datasheet, PDF (1/6 Pages) Motorola, Inc – N-CHANNEL MOS LINEAR RF POWER FET | |||
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SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
NâChannel EnhancementâMode
Designed for power amplifier applications in industrial, commercial and
amateur radio equipment to 175 MHz.
⢠Superior High Order IMD
⢠Specified 50 Volts, 30 MHz Characteristics
Output Power = 30 Watts
Power Gain = 18 dB (Typ)
Efficiency = 40% (Typ)
⢠IMD(d3) (30 W PEP) â â 35 dB (Typ)
⢠IMD(d11) (30 W PEP) â â 60 dB (Typ)
⢠100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
⢠Lower Reverse Transfer Capacitance (3.0 pF Typical)
D
Order this document
by MRF148/D
MRF148A
30 W, to 175 MHz
NâCHANNEL MOS
LINEAR RF POWER
FET
G
S
CASE 211â07, STYLE 2
MAXIMUM RATINGS
Rating
DrainâSource Voltage
DrainâGate Voltage
GateâSource Voltage
Drain Current â Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Value
120
120
± 40
6.0
115
0.66
â 65 to +150
200
Max
1.52
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE â CAUTION â MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Replaces MRF148/D
1
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