MRF141G Datasheet, PDF (3/9 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFET

R1
+
BIAS 0-ā 6ā V
-
INPUT _C2
C1
C3
C4 C5
DUT
T1
C6
C7
C10 C11
T2
L2
+
C12 _{28 V}
-
L1
OUTPUT
C13
HIGH
IMPEDANCE CENTER
WINDINGS ^TAP
CENTER
TAP
9:1
IMPEDANCE
RATIO
C8 C9
4:1
IMPEDANCE
RATIO
CONNECTIONS
TO LOW
IMPEDANCE
WINDINGS
C1 — Arco 402, 1.5–20 pF
C2 — Arco 406, 15–115 pF
C3, C4, C8, C9, C10 — 1000 pF Chip
C5, C11 — 0.1 µF Chip
C6 — 330 pF Chip
C7 — 200 pF and 180 pF Chips in Parallel
C12 — 0.47 µF Ceramic Chip, Kemet 1215 or Equivalent
C13 — Arco 403, 3.0–35 pF
L1 — 10 Turns AWG #16 Enameled Wire,
L1 — Close Wound, 1/4″ I.D.
L2 — Ferrite Beads of Suitable Material for
L2 — 1.5–2.0 µH Total Inductance
R1 — 100 Ohms, 1/2 W
R2 — 1.0 kOhm, 1/2 W
T1 — 9:1 RF Transformer. Can be made of 15–18 Ohms
T1 — Semirigid Co–Ax, 62–90 Mils O.D.
T2 — 1:9 RF Transformer. Can be made of 15–18 Ohms
T2 — Semirigid Co–Ax, 70–90 Mils O.D.
Board Material — 0.062″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides, ε_r = 5
NOTE: For stability, the input transformer T1 must be loaded
NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.
See pictures for construction details.
Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or Equivalent.
Figure 1. 175 MHz Test Circuit
TYPICAL CHARACTERISTICS
100
10
T_C = 25°C
11
10
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
1.04
1.03
1.02
1.01
1
0.99
0.98
0.97
0.96
0.95
0.94
0.93
0.92
0.91
0.9
100
-ā25
I_D = 5 A
4A
2A
1A
0.5 A
0.25 A
0
25
50
75
100
T_C, CASE TEMPERATURE (°C)
Figure 3. Gate–Source Voltage versus
Case Temperature
REV 3
3