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MRF141G Datasheet, PDF (2/9 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFET
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 mA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
Gate–Body Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 V, ID = 100 mA)
VGS(th)
Drain–Source On–Voltage
(VGS = 10 V, ID = 10 A)
VDS(on)
Forward Transconductance
gfs
(VDS = 10 V, ID = 5.0 A)
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
Ciss
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
Reverse Transfer Capacitance
Crss
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (2)
Common Source Amplifier Power Gain
Gps
(VDD = 28 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz)
Drain Efficiency
η
(VDD = 28 V, Pout = 300 W, f = 175 MHz, ID (Max) = 21.4 A)
Load Mismatch
ψ
(VDD = 28 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz,
VSWR 5:1 at all Phase Angles)
NOTES:
1. Each side measured separately.
2. Measured in push–pull configuration.
Min
Typ
Max
Unit
65
—
—
Vdc
—
—
5.0
mAdc
—
—
1.0
µAdc
1.0
3.0
5.0
Vdc
0.1
0.9
1.5
Vdc
5.0
7.0
—
mhos
—
350
—
pF
—
420
—
pF
—
35
—
pF
12
14
—
dB
45
55
—
%
No Degradation in Output Power
REV 3
2
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