MRF455 Datasheet, PDF (2/3 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(V_CC = 12.5 Vdc, P_out = 60 W, f = 30 MHz)
Collector Efficiency
(V_CC = 12.5 Vdc, P_out = 60 W, f = 30 MHz)
Series Equivalent Input Impedance
(V_CC = 12.5 Vdc, P_out = 60 W, f = 30 MHz)
Series Equivalent Output Impedance
(V_CC = 12.5 Vdc, P_out = 60 W, f = 30 MHz)
Parallel Equivalent Input Impedance
(V_CC = 12.5 Vdc, P_out = 60 W, f = 30 MHz)
Parallel Equivalent Output Impedance
(V_CC = 12.5 Vdc, P_out = 60 W, f = 30 MHz)
G_pe
13
—
—
η
55
—
—
Z_in
—
1.66–j.844
—
Z_out
—
1.73–j.188
—
Z_in
—
2.09/1030
—
Z_out
—
1.75/330
—
L5
C5
C6
L3
C7
C8
Unit
dB
%
Ohms
Ohms
Ω/pF
Ω/pF
+
12.5 Vdc
-
RF INPUT
C1
L1
C2
DUT
L2
R1
C4
C3
L4
RF OUTPUT
C1, C2, C4 — ARCO 469
C3 — ARCO 466
C5 — 1000 pF, UNELCO
C6, C7 — 0.1 µF Disc Ceramic
C8 — 1000 µF/15 V Electrolytic
R1 — 10 Ohm/1.0 Watt, Carbon
L1 — 3 Turns, #18 AWG, 5/16″ I.D., 5/16″ Long
L2 — VK200–20/4B, FERROXCUBE
L3 — 12 Turns, #18 AWG Enameled Wire, 1/4″ I.D., Close Wound
L4 — 3 Turns 1/8″ O.D. Copper Tubing, 3/8″ I.D., 3/4″ Long
L5 — 7 FERRITE Beads, FERROXCUBE #56–590–65/3B
Figure 1. 30 MHz Test Circuit Schematic
80
70 f = 30 MHz
60
V_CC = 13.6 V
12.5 V
50
40
30
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
P_in, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
90
80 f = 30 MHz
70
60
P_in = 3.5 V
1.75 W
1W
50
40
30
20
10 _{8 9 10 11 12 13 14 15 16 17 18}
V_CC, SUPPLY VOLTAGE (VOLTS)
Figure 3. Output Power versus Supply Voltage
2