MRF455 Datasheet, PDF (1/3 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

SEMICONDUCTOR TECHNICAL DATA
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by MRF455/D
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for power amplifier applications in industrial, commercial and
amateur radio equipment to 30 MHz.
• Specified 12.5 Volt, 30 MHz Characteristics —
Output Power = 60 Watts
Minimum Gain = 13 dB
Efficiency = 55%
MATCHING PROCEDURE
In the push–pull circuit configuration it is preferred that the transistors are
used as matched pairs to obtain optimum performance.
The matching procedure used by M/A-COM consists of measuring h _FE at the
data sheet conditions and color coding the device to predetermined h_FE ranges
within the normal h_FE limits. A color dot is added to the marking on top of the cap.
Any two devices with the same color dot can be paired together to form a
matched set of units.
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_CEO
V_CES
V_EBO
I_C
P_D
Storage Temperature Range
T_stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Value
18
36
4.0
15
175
1.0
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Symbol
R_θJC
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 100 mAdc, I_B = 0)
V_(BR)CEO
18
Collector–Emitter Breakdown Voltage
(I_C = 50 mAdc, V_BE = 0)
V_(BR)CES
36
Emitter–Base Breakdown Voltage
(I_E = 10 mAdc, I_C = 0)
V_(BR)EBO
4.0
ON CHARACTERISTICS
DC Current Gain
(I_C = 5.0 Adc, V_CE = 5.0 Vdc)
h_FE
10
DYNAMIC CHARACTERISTICS
Output Capacitance
(V_CB = 12.5 Vdc, I_E = 0, f = 1.0 MHz)
C_ob
—
MRF455
60 W, 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–07, STYLE 1
Max
Unit
1.0
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
150
—
—
250
pF
(continued)
1