MRF428 Datasheet, PDF (2/5 Pages) Tyco Electronics – The RF Line NPN Silicon RF Power Transistor

ELECTRICAL CHARACTERISTICS — continued (T_C = 25 °C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I_C = 5.0 Adc, V_CE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(V_CB = 50 Vdc, I_E = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Common-Emitter Amplifier Gain
(V_CC = 50 Vdc, P_OUT = 150 W (PEP), I_C(max) = 3.32 Adc,
f = 30 MHz)
Output Power
(V_CE = 50 Vdc, f = 30 MHz)
h_FE
C_OB
G_PE
P_OUT
Collector Efficiency
η
(V_CC = 50 Vdc, P_OUT = 150 W (PEP), I_C(max) = 3.32 Adc,
f = 30 MHz)
Intermodulation Distortion (1)
IMD
(V_CE = 50 Vdc, P_OUT = 150 W (PEP), I_C = 3.32 Adc)
Electrical Ruggedness
Ψ
(V_CC = 50 Vdc, P_OUT = 150 W (PEP), I_C(max) = 3.32 Adc,
VSWR 30:1 at all Phase Angles)
NOTE:
1. To Mil-Std-1311 Version A, Test Method 2204B, Two Tone, Reference each Tone.
10
30
—
—
—
220
250
pF
13
15
—
dB
150
—
—
W (PEP)
45
—
—
%
—
-33
-30
dB
No Degradation in Output Power
C1,C2,C7 — 170-780 pF, Arco 469
C3,C8,C9 — 0.1µF, 100 V Erie
C4 — 500 µF @ 6.0 V
C5 — 9.0-180 pF, Arco 463
C6 — 80-480 pF, Arco 466
C10 — 30 µF, 100 V
R1 — 10 Ω, 10 Watt
R2 — 10 Ω, 1.0 Watt
CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16” I.D., 5/16” Long
L2 — 10 µH Molded Choke
L3 — 12 Turns, #16 Enameled Wire Closewound, 1/4” I.D.
L4 — 5 Turns, 1/8” Copper Tubing, 9/16” I.D., 3/4” Long
L5 — 10 Ferrite Beads — Ferroxcube #56-590-65/3B
Figure 1. 30 MHz Test Circuit Schematic
2