MRF428 Datasheet, PDF (1/5 Pages) Tyco Electronics – The RF Line NPN Silicon RF Power Transistor

SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for high-voltage applications as a high-power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
• Specified 50 Volt, 30 MHz Characteristics —
Output Power = 150 W (PEP)
Minimum Gain = 13 DB
Efficiency = 45%
• Intermodulation Distortion @ 150 W (PEP) —
IMD = -32 db (Max)
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
@ 150 W CW
Order this document
by MRF428/D
MRF428
150 W (PEP), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Withstand Current — 10 s
Total Device Dissipation @ T_C = 25 °C
Derate above 25 °C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I_C = 200 mAdc, I_B = 0)
Collector-Emitter Breakdown Voltage (I_C = 100 mAdc, V_BE = 0)
Collector-Base Breakdown Voltage (I_C = 100 mAdc, I_E = 0)
Emitter-Base Breakdown Voltage (I_E = 10 mAdc, I_C = 0)
V_(BR)CEO
V_(BR)CES
V_(BR)CBO
V_(BR)EBO
1
Symbol
V_CEO
V_CBO
V_EBO
I_C
—
P_D
T_stg
Symbol
R_θJC
Min
55
110
110
4.0
Value
55
110
4.0
20
30
320
1.83
-65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W atts
W/°C
°C
Max
Unit
0.5
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
—
Vdc
(continued)