MRF314 Datasheet, PDF (2/5 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(V_CB = 30 Vdc, I_E = 0, f = 1.0 MHz)
C_ob
—
30
40
pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(V_CC = 28 Vdc, P_out = 30 W, f = 150 MHz)
Collector Efficiency
(V_CC = 28 Vdc, P_out = 30 W, f = 150 MHz)
Load Mismatch
(V_CC = 28 Vdc, P_out = 30 W, f = 150 MHz,
VSWR = 30:1 all phase angles)
G_PE
10
13.5
—
dB
η
50
—
—
%
ψ
No Degradation in Power Output
C1
RF INPUT
Z1
C2
C3 RFC1
R2
R1
RFC3
C8
RFC2
L1
Z2
DUT
C4
C5
DC + 28 Vdc
C9
C10
C7
RF OUTPUT
C6
C1, C7 — 18 pF, 100 mil ATC
C2 — 68 pF, 100 mil ATC
C3, C6 — Johanson #JMC 5501
C4 — 270 pF, 100 mil ATC
C5 — 240 pF, 100 mil ATC
C8, C9 — 100 pF Underwood
C10 — 1.0 µF Tantalum
L1 — 2 Turns, 2.5″ #20 Wire, ID = 0.275″
R1, R2 — 10 Ω, 1.0 W
RFC1 — 15 µH Molded Coil
RFC2 — 2 Turns, 2.5″ #20 Wire, ID = 0.2″
RFC3 — Ferroxcube VK200–19/4B
Z1 — Microstrip, 0.168″ W x 1.6″ L
Z2 — Microstrip, 0.168″ W x 1.2″ L
Board — Glass Teflon ε_r = 2.55
Figure 1. 150 MHz Test Circuit
2