MRF314 Datasheet, PDF (1/5 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistors
. . . designed primarily for wideband large–signal driver and output amplifier
stages in the 30–200 MHz frequency range.
• Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 30 Watts
Minimum Gain = 10 dB
• 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability Applications
Order this document
by MRF314/D
MRF314
30 W, 30–200 MHz
RF POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T_C = 25°C (1)
Derate above 25°C
V_CEO
V_CBO
V_EBO
I_C
P_D
Storage Temperature Range
T_stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Value
35
65
4.0
3.4
82
0.47
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Symbol
R_θJC
CASE 211–07, STYLE 1
Max
Unit
2.13
°C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 30 mAdc, I_B = 0)
V_(BR)CEO
35
—
—
Vdc
Collector–Emitter Breakdown Voltage
(I_C = 30 mAdc, V_BE = 0)
V_(BR)CES
65
—
—
Vdc
Collector–Base Breakdown Voltage
(I_C = 30 mAdc, I_E = 0)
V_(BR)CBO
65
—
—
Vdc
Emitter–Base Breakdown Voltage
(I_E = 3.0 mAdc, I_C = 0)
V_(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(V_CB = 30 Vdc, I_E = 0)
I_CBO
—
—
3.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(I_C = 1.5 Adc, V_CE = 5.0 Vdc)
h_FE
20
—
80
—
NOTE:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
1