MRF313 Datasheet, PDF (2/3 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
ON CHARACTERISTICS
DC Current Gain (I_C = 100 mAdc, V_CE = 10 Vdc)
h_FE
20
60
150
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(I_C = 100 mAdc, V_CE = 20 Vdc, f = 200 MHz)
f_T
—
2.5
—
Output Capacitance
(V_CB = 28 Vdc, I_E = 0, f = 1.0 MHz)
C_ob
—
3.5
5.0
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain (1)
(V_CC = 28 Vdc, P_out = 1.0 W, f = 400 MHz)
Collector Efficiency
(V_CC = 28 Vdc, P_out = 1.0 W, f = 400 MHz)
G_pe
15
16
—
η
—
45
—
Series Equivalent Input Impedance
(V_CC = 28 Vdc, P_out = 1.0 W, f = 400 MHz)
Z_in
—
6.4 – j4.8
—
Series Equivalent Output Impedance
(V_CC = 28 Vdc, P_out = 1.0 W, f = 400 MHz)
Z_out
—
75 – j45
—
NOTE:
1. Class C
Unit
—
GHz
pF
dB
%
Ohms
Ohms
RF
INPUT
L4
C7
C8
C6
L3
C2
Z1
Z2
Z3
DUT
L1
C1
L2
C3
R
+
+
C9
+ā28 V
-
C5
C4
RF
OUTPUT
C1, C2, C4 — 1.0–20 pF JOHANSON 9063
C3 — 1.0–10 pF JOHANSON
C5 — 150 pF Chip
C6 — 0.1 µF
C7, C8 — 680 pF Feedthru
C9 — 1.0 µF TANTALUM
L1, L3 — 5 Turns, AWG #20, 1/4″ I.D.
L2 — Ferrite Bead, FERROXCUBE
L2 — No. 56–590–65/4B
L4 — FERROXCUBE VK200–20/4B
L4 — Input/Output Connectors — Type N
Board — Glass Teflon, ε = 2.56, t = 0.062″
R — 4.7 Ohms, 1/4 W
Z1 — 2.0″ x 0.1″ MICROSTRIP LINE
Z2, Z3 — 2.6″ x 0.1″ MICROSTRIP LINE
Figure 1. 400 MHz Power Gain Test Circuit
2