MRF313 Datasheet, PDF (1/3 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTOR NPN SILICON

SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
High-Frequency Transistor
. . . designed for wideband amplifier, driver or oscillator applications in military,
mobile, and aircraft radio.
• Specified 28 Volt, 400 MHz Characteristics —
Output Power = 1.0 Watt
Power Gain = 15 dB Min
Efficiency = 45% Typ
• Emitter Ballast and Low Current Density for Improved MTBF
• Common Emitter for Improved Stability
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by MRF313/D
MRF313
1.0 W, 400 MHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I_C = 10 mAdc, I_B = 0)
Collector–Emitter Breakdown Voltage (I_C = 5.0 mAdc, V_BE = 0)
V_(BR)CEO
V_(BR)CES
Collector–Base Breakdown Voltage (I_C = 0.1 mAdc, I_E = 0)
V_(BR)CBO
Emitter–Base Breakdown Voltage (I_E = 1.0 mAdc, I_C = 0)
V_(BR)EBO
Collector Cutoff Current (V_CE = 20 Vdc, I_B = 0)
I_CEO
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_D
T_stg
Symbol
R_θJC
Min
30
35
35
3.0
—
CASE 305A–01, STYLE 1
Value
30
40
3.0
150
6.1
35
–65 to +150
Max
28.5
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
Unit
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
1.0
mAdc
(continued)
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