MRF175GU Datasheet, PDF (2/11 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

ELECTRICAL CHARACTERISTICS — continued (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (1)
Gate Threshold Voltage (V_DS = 10 V, I_D = 100 mA)
V_GS(th)
1.0
3.0
6.0
Vdc
Drain–Source On–Voltage (V_GS = 10 V, I_D = 5.0 A)
V_DS(on)
0.1
0.9
1.5
Vdc
Forward Transconductance (V_DS = 10 V, I_D = 2.5 A)
g_fs
2.0
3.0
—
mhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (V_DS = 28 V, V_GS = 0, f = 1.0 MHz)
C_iss
—
180
—
pF
Output Capacitance (V_DS = 28 V, V_GS = 0, f = 1.0 MHz)
C_oss
—
200
—
pF
Reverse Transfer Capacitance (V_DS = 28 V, V_GS = 0, f = 1.0 MHz)
C_rss
—
20
—
pF
FUNCTIONAL CHARACTERISTICS — MRF175GV (2) (Figure 1)
Common Source Power Gain
G_ps
(V_DD = 28 Vdc, P_out = 200 W, f = 225 MHz, I_DQ = 2.0 x 100 mA)
12
14
—
dB
Drain Efficiency
η
(V_DD = 28 Vdc, P_out = 200 W, f = 225 MHz, I_DQ = 2.0 x 100 mA)
55
65
—
%
Electrical Ruggedness
ψ
(V_DD = 28 Vdc, P_out = 200 W, f = 225 MHz, I_DQ = 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
No Degradation in Output Power
NOTES:
1. Each side of device measured separately.
2. Measured in push–pull configuration.
R1
BIAS 0-6 V
C3
C4
L2
+
C8
C9
C10
28 V
-
R2
T1
D.U.T.
L1
T2
C6
C5
C1
C2
C7
C1 — Arco 404, 8.0–60 pF
C2, C3, C7, C8 — 1000 pF Chip
C4, C9 — 0.1 µF Chip
C5 — 180 pF Chip
C6 — 100 pF and 130 pF Chips in Parallel
C10 — 0.47 µF Chip, Kemet 1215 or Equivalent
L1 — 10 Turns AWG #16 Enamel Wire, Close
L1 — Wound, 1/4″ I.D.
L2 — Ferrite Beads of Suitable Material for
L2 — 1.5ā–ā2.0 µH Total Inductance
Board material — .062″ fiberglass (G10),
Two sided, 1 oz. copper, ε_r ^ 5
Unless otherwise noted, all chip capacitors
are ATC Type 100 or Equivalent.
R1 — 100 Ohms, 1/2 W
R2 — 1.0 k Ohm, 1/2 W
T1 — 4:1 Impedance Ratio RF Transformer.
T1 — Can Be Made of 25 Ohm Semirigid Coax,
T1 — 47–52 Mils O.D.
T2 — 1:9 Impedance Ratio RF Transformer.
T2 — Can Be Made of 15–18 Ohms Semirigid
T2 — Coax, 62–90 Mils O.D.
NOTE: For stability, the input transformer T1 should be loaded
NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.
REV 8
2
Figure 1. 225 MHz Test Circuit