MRF175GU Datasheet, PDF (1/11 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF175GU/D
The RF MOSFET Line
RF Power
Field-Effect Transistors
N–Channel Enhancement–Mode
MRF175GU
MRF175GV
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
• Guaranteed Performance
MRF175GV @ 28 V, 225 MHz (“V” Suffix)
Output Power — 200 Watts
Power Gain — 14 dB Typ
Efficiency — 65% Typ
MRF175GU @ 28 V, 400 MHz (“U” Suffix)
Output Power — 150 Watts
Power Gain — 12 dB Typ
Efficiency — 55% Typ
D
• 100% Ruggedness Tested At Rated Output Power
• Low Thermal Resistance
G
• Low C_rss — 20 pF Typ @ V_DS = 28 V
G
S
(FLANGE)
200/150 WATTS, 28 V, 500 MHz
N–CHANNEL MOS
BROADBAND
RF POWER FETs
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
(R_GS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 375–04, STYLE 2
D
Symbol
V_DSS
V_DGR
Value
65
65
Unit
Vdc
Vdc
V_GS
±40
Vdc
I_D
26
Adc
P_D
400
Watts
2.27
W/°C
T_stg
–65 to +150
°C
T_J
200
°C
Symbol
R_θJC
Max
0.44
Unit
°C/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(V_GS = 0, I_D = 50 mA)
V_(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(V_DS = 28 V, V_GS = 0)
Gate–Source Leakage Current
(V_GS = 20 V, V_DS = 0)
I_DSS
—
—
2.5
mAdc
I_GSS
—
—
1.0
µAdc
(continued)
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
1