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MRF174 Datasheet, PDF (2/9 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FET | |||
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
DrainâSource Breakdown Voltage (VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)
GateâSource Leakage Current (VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
Forward Transconductance (VDS = 10 V, ID = 3.0 A)
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
FUNCTIONAL CHARACTERISTICS (Figure 1)
Noise Figure
NF
(VDD = 28 Vdc, ID = 2.0 A, f = 150 MHz)
Common Source Power Gain
Gps
(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA)
Drain Efficiency
η
(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA)
Electrical Ruggedness
Ï
(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA,
VSWR 30:1 at all Phase Angles)
Min
Typ
Max
Unit
65
â
â
Vdc
â
â
10
mAdc
â
â
1.0
µAdc
1.0
3.0
1.75
2.5
6.0
Vdc
â
mhos
â
175
â
pF
â
190
â
pF
â
40
â
pF
â
3.0
â
dB
9.0
11.8
â
dB
50
60
â
%
No Degradation in Output Power
R2
BIAS
ADJUST
R3
+
C9
C10
â
D1
RF INPUT
C1
C3
L1
C2 C4
R4
L2
C5
C11
RFC1
DUT
L4
C12
R1
L3
C6
C13
C14
C8
C7
+
VDD = 28 V
â
RF OUTPUT
REV 7
2
C1 â 15 pF Unelco
C2 â Arco 462, 5.0 â 80 pF
C3 â 100 pF Unelco
C4 â 25 pF Unelco
C6 â 40 pF Unelco
C7 â Arco 461, 2.7 â 30 pF
C5, C8 â Arco 463, 9.0 â 180 pF
C9, C11, C14 â 0.1 µF Erie Redcap
C10 â 50 µF, 50 V
C12, C13 â 680 pF Feedthru
D1 â 1N5925A Motorola Zener
L1 â #16 AWG, 1â1/4 Turns, 0.213â³ ID
L2 â #16 AWG, Hairpin
0.25â³
L3 â #14 AWG, Hairpin
0.062â³
0.47â³
0.2â³
L4 â 10 Turns #16 AWG Enameled Wire on R1
RFC1 â 18 Turns #16 AWG Enameled Wire, 0.3â³ ID
R1 â 10 â¦, 2.0 W
R2 â 1.8 kâ¦, 1/2 W
R3 â 10 kâ¦, 10 Turn Bourns
R4 â 10 kâ¦, 1/4 W
Figure 1. 150 MHz Test Circuit
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