MRF174 Datasheet, PDF (1/9 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FET

SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode
Designed primarily for wideband large–signal output and driver stages up to
200 MHz frequency range.
• Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 125 Watts
Minimum Gain = 9.0 dB
Efficiency = 50% (Min)
• Excellent Thermal Stability, Ideally Suited For Class A
Operation
• Facilitates Manual Gain Control, ALC and Modulation
Techniques
• 100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
• Low Noise Figure — 3.0 dB Typ at 2.0 A, 150 MHz
D
Order this document
by MRF174/D
MRF174
125 W, to 200 MHz
N–CHANNEL MOS
BROADBAND RF POWER
FET
G
S
CASE 211–11, STYLE 2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage
(RGS = 1.0 MΩ)
VDSS
65
Vdc
VDGR
65
Vdc
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VGS
ID
PD
± 40
Vdc
13
Adc
270
Watts
1.54
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg
– 65 to +150
°C
TJ
200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R_θJC
0.65
°C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 7
1