MRF10502 Datasheet, PDF (2/4 Pages) Tyco Electronics – MICROWAVE POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)
V(BR)CES
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)CBO
V(BR)EBO
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
ICBO
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz)
GPB
Collector Efficiency
η
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz)
Load Mismatch
ψ
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
Min
Typ
Max
Unit
65
—
—
Vdc
65
—
—
Vdc
3.5
—
—
Vdc
—
—
25
mAdc
20
—
—
—
8.5
9.0
—
dB
40
45
—
%
No Degradation in Output Power
RF INPUT
Z5
Z1 Z2 Z3 Z4
C2
C3
L1
D.U.T.
Z6 Z7 Z8 Z9
+
C4
C1
+
–
RF OUTPUT
C1 — 82 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1 µF
C4 — 100 µF, 100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
ε_r = 2.55, 2 Oz. Copper
.081
Replaces MRF10500/D
2
.700
.150
.625
1.309
.105
1.123
.216
.081
1.108
.500
0.140
2.000
Figure 1. Test Circuit
.160
.355
.081
.100
.644
.365