MRF10502 Datasheet, PDF (1/4 Pages) Tyco Electronics – MICROWAVE POWER TRANSISTOR NPN SILICON

SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistor
Designed for 1025– 1150 MHz pulse common base amplifier applications
such as TCAS, T ACAN and Mode–S transmitters.
• Guaranteed Performance @ 1090 MHz
Output Power = 500 Watts Peak
Gain = 8.5 dB Min, 9.0 dB (Typ)
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Hermetically Sealed Industry Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input and Output Matching
• Characterized with 10 µs, 1% Duty Cycle Pulses
Order this document
by MRF10502/D
MRF10502
500 W (PEAK)
1025 – 1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 355J–02, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°C
VCES
VCBO
VEBO
IC
PD
65
65
3.5
29
1460
8.3
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Tstg
– 65 to +200
°C
TJ
200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
R_θJC
0.12
°C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θ_JC value
measured @ 32 µs, 2%.)
Replaces MRF10500/D
1