MRF10350 Datasheet, PDF (2/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTOR

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I_C = 60 mAdc, V_BE = 0)
Collector–Base Breakdown Voltage (I_C = 60 mAdc, I_E = 0)
Emitter–Base Breakdown Voltage (I_E = 10 mAdc, I_C = 0)
Collector Cutoff Current (V_CB = 36 Vdc, I_E = 0)
ON CHARACTERISTICS
DC Current Gain (I_C = 5.0 Adc, V_CE = 5.0 Vdc)
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(V_CC = 50 Vdc, P_out = 350 W Peak, f = 1090 MHz)
Collector Efficiency
(V_CC = 50 Vdc, P_out = 350 W Peak, f = 1090 MHz)
Load Mismatch
(V_CC = 50 Vdc, P_out = 350 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
V_(BR)CES
V_(BR)CBO
V_(BR)EBO
I_CBO
h_FE
G_PB
η
ψ
Min
Typ
Max
Unit
65
—
—
Vdc
65
—
—
Vdc
3.5
—
—
Vdc
—
—
25
mAdc
20
—
—
—
8.5
9.0
—
dB
40
—
—
%
No Degradation in Output Power
RF INPUT
Z5
Z1 Z2 Z3 Z4
L1
C2
C3
D.U.T.
Z6 Z7 Z8 Z9
+
C4
C1
+
-
RF OUTPUT
C1 — 75 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1 µF
C4 — 100 µF, 100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
ąε_r = 2.55, 2 Oz. Copper
REV 1
2
.094
.589
.573
.083 ^.170
.616
.838
.130
.395
.402
1.518 .571
.278
.394
.258 _.170
.364
.594 1.685
.095
Figure 1. Test Circuit
.156
.159
.382 .083
.396
.100
.803
.160