MRF10350 Datasheet, PDF (1/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistor
Designed for 1025–1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
• Guaranteed Performance @ 1090 MHz
Output Power = 350 Watts Peak
Gain = 8.5 dB Min, 9.0 dB (Typ)
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Hermetically Sealed Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input and Output Matching
• Characterized using Mode–S Pulse Format
Order this document
by MRF10350/D
MRF10350
350 W (PEAK)
1025–1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 355E–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ T_C = 25°C (1), (2)
Derate above 25°C
V_CES
V_CBO
V_EBO
I_C
P_D
65
65
3.5
31
1590
9.1
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
T_stg
–65 to +200
°C
T_J
200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
R_θJC
0.11
°C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst Case θ_JC measured
using Mode–S pulse train, 128 µs burst 0.5 µs on, 0.5 µs off repeating at 6.4 ms interval.)
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