MRF10031 Datasheet, PDF (2/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTOR

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I_C = 25 mAdc, V_BE = 0)
V_(BR)CES
55
—
Collector–Base Breakdown Voltage (I_C = 25 mAdc, I_E = 0)
V_(BR)CBO
55
—
Emitter–Base Breakdown Voltage (I_E = 5.0 mAdc, I_C = 0)
V_(BR)EBO
3.5
—
Collector Cutoff Current (V_CB = 36 Vdc, I_E = 0)
I_CBO
—
—
ON CHARACTERISTICS
DC Current Gain (I_C = 500 mAdc, V_CE = 5.0 Vdc)
h_FE
20
—
FUNCTIONAL TESTS (10 µs Pulses @ 50% duty cycle for 3.5 ms; overall duty cycle – 25%)
Common–Base Amplifier Power Gain
(V_CC = 36 Vdc, P_out = 30 W Peak, f = 960 MHz)
G_PB
9.0
9.5
Collector Efficiency
(V_CC = 36 Vdc, P_out = 30 W Peak, f = 960 MHz)
η
40
45
—
Vdc
—
Vdc
—
Vdc
2.0
mAdc
—
—
—
dB
—
%
Load Mismatch
(V_CC = 36 Vdc, P_out = 30 W Peak, f = 960 MHz,
VSWR = 10:1 All Phase Angles)
ψ
No Degradation in Output Power
Z5
RF INPUT
Z1 Z2 Z3 Z4
D.U.T.
+
C2 C3 C4
L1
+
36 Vdc
-
RF OUTPUT
Z6 Z7 Z8 Z9
C1
C1 — 75 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1 µF
C4 — 1000 µF, 50 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
ε_r = 2.55, 2 Oz. Copper
.083
REV 6
2
BROADBAND FIXTURE
.223
.118
.733
.780
.669
.628
1.350
.083
1.020
.218
2.138
.215
.354
.389
.113
.100
.083
1.210
.400
.128
Figure 1. Test Circuit