MRF10031 Datasheet, PDF (1/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Long Pulse
Power Transistor
Designed for 960–1215 MHz long or short pulse common base amplifier
applications such as JTIDS and Mode–S transmitters.
• Guaranteed Performance @ 960 MHz, 36 Vdc
Output Power = 30 Watts Peak
Minimum Gain = 9.0 dB Min (9.5 dB Typ)
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Hermetically Sealed Industry Standard Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching for Broadband Operation
Order this document
by MRF10031/D
MRF10031
30 W (PEAK)
960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 376B–02, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage (1)
Emitter–Base Voltage
Collector Current — Continuous (1)
Total Device Dissipation @ T_C = 25°C (1), (2)
Derate above 25°C
V_CES
V_CBO
V_EBO
I_C
P_D
55
55
3.5
3.0
110
0.625
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
T_stg
– 65 to + 200
°C
T_J
200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
R_θJC
1.6
°C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θ_JC value
measured @ 23% duty cycle)
REV 6
1
MRF10031