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MA4VAT907-1061T Datasheet, PDF (2/4 Pages) Tyco Electronics – High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz
High IIP3 PIN Diode Variable Attenuator
0.80-1.0 GHz
MA4VAT907-1061T
V3
Electrical Specifications @ +25 °C
Parameter
Frequency Band
Unit
Min
Typ
Max
Low Loss RF Parameter (Pin = +10 dBm, except for P1dB, & IP3)
Insertion Loss
0.80 GHz—1.00 GHz
dB
-
1.0
1.2
Input Return Loss
dB
11
12
-
Output Return Loss
dB
11
12
-
P1dB
dBm
30
-
-
Input IP3
dBm
45
49
-
Control Voltage
V
-
0 V @ OuA
-
Maximum Attenuation RF Parameter (Pin = +10 dBm, except for P1dB, & IP3)
Maximum Attenuation
0.80 GHz—1.00 GHz
dB
18.5
24
-
Input Return Loss @ Max Attenuation
dB
15
21
-
Output Return Loss @ Max Attenuation
dB
15
21
-
Input IP3
dBm
36
39
-
Control Voltage @ Max Attenuation
V
-
3.0 V @ 3.35 mA
-
Typical RF Performance Over Industry Designated RF Frequency Bands
Band
Freq
I. Loss
Att.
R. Loss
IIP3
AMPS
(MHz)
(dB)
(dB)
RX
824-849
0.9
22
TX
869-894
0.9
22
(dB)
(dBm)
12
50
12
50
Phase
-Relative-
(Degree)
-15°
GSM
RX
880-915
1.2
20
11
50
-20°
TX
925-960
1.2
20
11
50
Notes:
1. All are typical values only.
2. Relative phase is the measured Insertion Phase difference between Insertion Loss and 15 dB Attenuation. (Please refer
to the plots below)
2
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