MA4VAT907-1061T Datasheet, PDF (1/4 Pages) Tyco Electronics – High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz

High IIP3 PIN Diode Variable Attenuator
0.80-1.0 GHz
Features
• Bandwidth: 0.80 GHz to 1.0 GHz
• 1.0 dB Insertion Loss, Typical
• 12 dB Return Loss, Typical
• 25 dB Attenuation, Typical
• 50 dBm Input IP3, Typical (1MHz Offset,
@+0dBm Pinc)
• 0 – 3.0 Volts Control Voltage @3.3mA Typical
• RoHs Compliant
Extra Features
• Covers the following Bands:
• GSM
• AMPS
• Usable Bandwidth: 0.60 GHz to 1.20 GHz
• 1.5 dB Insertion Loss, Typical
• 1.8:1 VSWR, Typical
• 18.5 dB Attenuation, Typical
Description and Applications
M/A-COM’s MA4VAT907-1061T is a HMIC PIN Diode
Variable Attenuator which utilizes an integrated 90
degree 3dB hybrid with a pair of Silicon PIN Diodes
to perform the required attenuation function as D.C.
Voltage (Current) is applied.
This device operates from 0 to 2.77Volts at 3.0mA
typical control current for maximum attenuation. The
user can add external biasing resistors to the bias
ports for higher voltage requirements as required.
M/A-COM’s MA4VAT907-1061T PIN Diode Variable
Attenuator is designed for AGC Circuit Applications
requiring:
• Lower Insertion Loss
• Lower distortion through attenuation
• Larger dynamic range for wide spread spectrum
applications
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
MA4VAT907-1061T
V3
SOIC-8 PIN Configuration (Topview)
PIN
Function
Comments
1
DC1
2
GND
3
GND
4
RFin/out
Symetrical as RF Input/Ouput
5
RFout/in
Symetrical as RF Input/Ouput
6
GND
7
GND
8
DC2
Absolute Maximum Ratings
@ +25 °C
Parameter
Maximum Ratings
Operating Temperature
-40 °C to +85 °C
Storage Temperature
-65 °C to +150 °C
Junction Temperature
+175 °C
RF C.W. Incident Power
+33 dBm C.W.
Reversed Current @ -30 V
50nA
Control Current
50 mA per Diode
Notes:
1. All the above values are at +25 °C, unless otherwise noted.
2. Exceeding these limits may cause permanent damage.
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