MA4VAT900-1277T Datasheet, PDF (2/4 Pages) Tyco Electronics – HMIC PIN Diode Variable Attenuator 0.80-1.0 GHz

HMIC PIN Diode Variable Attenuator
0.80-1.0 GHz
Electrical Specifications @ +25 °C
Parameter
Frequency Band
No DC Bias RF Parameter
Insertion Loss
Input Return Loss
Output Return Loss
P1dB
IIP3
Control Voltage
0.80 GHz—1.00 GHz
DC Bias RF Parameter
Maximum Attenuation
0.80 GHz—1.00 GHz
Input Return Loss @ Max Attenuation
Output Return Loss @ Max Attenuation
Input IP3
Control Voltage @ Max Attenuation
Unit
dB
dB
dB
dBm
dBm
V
dB
dB
dB
dBm
V
MA4VAT900-1277T
V2
Min
Typ
Max
-
1.0
1.2
11
14
-
11
14
-
30
33
-
37
40
-
-
0 V @ 0uA
-
21
24
-
17
20
-
17
20
-
15
18
-
-
1.80 V @ 330 uA
-
Typical RF Performance Over Industry Designated RF Frequency Bands
Band
Freq
I. Loss
Att.
R. Loss
IIP3
AMPS
(MHz)
(dB)
(dB)
RX
824-849
0.9
24
TX
869-894
0.9
24
(dB)
(dBm)
13
40
13
40
Phase
-Relative-
(Degree)
-15°
GSM
RX
880-915
1.1
21
11
40
-15°
TX
925-960
1.1
21
11
40
Notes:
1. All are typical values only.
2. Relative phase is the measured Insertion Phase difference between Insertion Loss and 15 dB Attenuation. (Please refer
to the plots below)
2
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