MA4VAT900-1277T Datasheet, PDF (1/4 Pages) Tyco Electronics – HMIC PIN Diode Variable Attenuator 0.80-1.0 GHz

HMIC PIN Diode Variable Attenuator
0.80-1.0 GHz
Features
• Bandwidth: 0.80 GHz to 1.00 GHz
• <1.0 dB Insertion Loss, Typical
• 1.4:1 VSWR, Typical
• 24 dB Attenuation, Typical
• 40 dBm IIP3, Typical ( 1MHz Offset, @ +0dBm Pinc )
• 0-1.8 Volt Control Voltage.
• User can add an External Resistor for higher
voltage requirements.
• RoHs Compliant
Extra Features
• Usable Bandwidth: 0.60 GHz to 2.00 GHz
• 1.9 dB Insertion Loss, Max
• 2:1 VSWR, Max
• 20 dB Attenuation, Max
Description and Applications
M/A-COM’s MA4VAT900-1277T is a HMIC
MONLITHIC PIN Diode Variable Attenuator which
utilizes an integrated 90 degree 3dB hybrid with a
pair of Silicon PIN Diodes to perform the required
attenuation function as Voltage (Current) is applied.
This device operates from 0 to 2 Volts at 330 uA
typical control current for maximum attenuation. The
user can add external biasing resistors to the bias
ports for higher voltage requirements as required.
M/A-COM’s MA4VAT900-1277T PIN Diode Variable
Attenuator is designed for AGC Circuit Applications
requiring:
• Lower Insertion Loss
• Lower distortion through attenuation
• Larger dynamic range for wide spread spectrum
applications
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
MA4VAT900-1277T
V2
MLP 3mm Package—Circuit Side View
PIN 1
PIN 16
PIN Configuration
PIN
Function
1
GND
2
GND
PIN
Function
9
DC2
10
GND
3
GND
11
GND
4
GND
12
DC1
5
GND
13
GND
6
RF2
14
GND
7
GND
15
RF1
8
GND
16
GND
Center Paddle is RF and D.C. Ground
Note: RF Input & RF Output Ports are Functionally Symmetrical
Absolute Maximum Ratings @ +25 °C
Parameter
Maximum Ratings
Operating Temperature
-40 °C to +85 °C
Storage Temperature
-65 °C to +150 °C
Junction Temperature
+175 °C
RF C.W. Incident Power
+33 dBm C.W.
Reversed Current @ -30 V
50nA
Control Current
5 mA per Diode
Notes:
1. All the above values are at +25 °C, unless otherwise noted.
2. Exceeding these limits may cause permanent damage.
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Visit www.macom.com for additional data sheets and product information.