MA4AGBLP912 Datasheet, PDF (2/5 Pages) Tyco Electronics – AlGaAs Beam Lead PIN Diode

AlGaAs Beam Lead PIN Diode
Electrical Specifications @ T_A = 25 °C
Parameters and Test Conditions
Symbol and Unit
Total Capacitance at -5 V at 10 GHz¹
Ct
Forward Resistance at +20 mA at 10 GHz²
Rs
Forward Voltage at +10 mA
Vf
Leakage Current at -40 V
Ir
Minority Carrier Lifetime
TL
fF
Ohms
Volts
nA
nS
MA4AGBLP912
V 1.00
Min.
-
-
-
-
-
Units
Typ.
20
4.0
1.36
-50
5
Max.
22
4.9
1.50
-300
10
NOTES:
1. Reverse Bias Capacitance is measured as a Single Series diode at -5 V in a 50 Ω test fixture at 10 GHz.
2. Forward Series Resistance is measured as a Single Series diode at 20 mA in a 50 Ω test fixture at 10 GHz.
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2
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