MA4SW510 Datasheet, PDF (1/5 Pages) Tyco Electronics – SP5T PIN Diode Reflective Switch

SP5T PIN Diode
Reflective Switch
V 2.00
Features
n Ultra Broad Bandwidth: 50 MHz to 26 GHz
n 1.0 dB Insertion Loss, 30 dB Isolation at 20 GHz
n Reliable. Fully Monolithic, Glass Encapsulated
Construction
MA4SW510 Layout
Description
The MA4SW510 is a SP5T Series-Shunt broad band switch
made with M/A-COM’s HMIC ^TM (Heterolithic Microwave
Integrated Circuit) process, US Patent 5,268,310. This
process allows the incorporation of silicon pedestals that
form series and shunt diodes or vias by imbedding them in a
low loss, low dispersion glass. This hybrid combination of
Silicon and Glass gives HMIC Switches exceptional low
loss and remarkable high isolation through low
millimeter-wave frequencies.
Applications
These high performance switches are suitable for the use in
multi-band ECM, Radar, and instrumentation control
circuits where high isolation to insertion loss ratios are
required. With a standard +5 V/-5 V, TTL controlled PIN
diode driver, 50 ns switching speeds are achieved.
Absolute Maximum Ratings¹
@ TA = +25 °C (unless otherwise
specified)
Parameter
Operating Temperature
Storage Temperature
RF C.W. Incident Power
(+/-20 mA)
DC Bias Current (Forward)
Applied Voltage (Reverse)
Value
-65 °C to +150 °C
65 °C to +175 °C
+ 30 dBm
+/-50 mA
25 V
Nominal Chip Dimensions
Chip
RF
J1
J2
J3
J4
J5
J6
Chip Dimensions (µm)
X
Y
1730
1480
Pad Dimensions (µm)
X
Y
120
120
Pad Locations (µm)
X
Y
0
0
-750
0
-750
+825
0
+1240
-750
+825
+750
0
Pad Locations Relative to J1
1. Exceeding any of these values may result in permanent
damage