MA4E2099 Datasheet, PDF (1/3 Pages) Tyco Electronics – High Barrier Silicon Schottky Diodes: Bridge Octoquad

High Barrier Silicon Schottky Diodes:
Bridge Octoquad
V 2.00
Features
n Designed for High Dynamic Range Applications
n Low Parasitic Capitance and Inductance
n Low Parasitic Resistance
n Recommended for DC-12GHz
n Uniform Electrical Characteristics with Each Junction
n Rugged HMIC Construction with Polyimide Scratch
Protection
ODS-1284 Outline (Topview)
Description
The MA4E2099-1284 Bridge Octoquad is offered for high
dynamic range applications. This device is constructed with
Silicon High Barrier Schottky Diodes fabricated with the
patented Heterolithic Microwave Integrated Circuit (HMIC)
process to ensure electrical characteristics uniformity for each
junction. HMIC circuits consist of Silicon pedestals which
form diodes or via conductors embedded in a glass dielectric,
which acts as the low dispersion, low loss, microstrip
transmission medium. The combination of silicon and glass
allows HMIC devices to have excellent loss and power
dissipation characteristics in a low profile, reliable device.
Applications
The devices can be used in higher power mixer, detector, and
limiter circuits through 12 GHz.
Absolute Maximum Ratings¹
@ +25 °C
Parameter
Value
Operating Temperature
-55 °C to +150 °C
Storage Temperature
-55 °C to +150 °C
Forward Current
20 mA
Reverse Voltage
l -9 V l
RF C.W. Incident Power
+ 25 dBm
RF & DC Dissipated Power
100 mW
Dim
A
B
C
D Sq.
E
Inches
Min.
0.0285
Max.
0.0297
0.0285
0.0040
0.0035
0.0165
0.0297
0.0060
0.0043
0.0173
Millimeters
Min.
0.725
0.725
0.102
0.090
0.420
Max.
0.755
0.755
0.153
0.110
0.440
Equivalent Circuit
2
1
3
1. Exceeding any of these values may result in permanent
damage
4
1