MA4AGSW1A Datasheet, PDF (1/15 Pages) Tyco Electronics – AlGaAs SPST Non-Reflective PIN Diode Switch

AlGaAs SPST Non-Reflective PIN Diode Switch
FEATURES
• Ultra Broad Bandwidth: 10 GHz to 50 GHz
• Functional Bandwidth: 100 MHz to 70 GHz
• 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz
• M/A-COM’s unique patent pending AlGaAs
hetero-junction anode technology.
• Silicon Nitride Passivation
• Polymide Scratch protection
DESCRIPTION
MA4AGSW1A
Rev 2.0
MA4AGSW1A LAYOUT
M/A-COM’s MA4AGSW1A is an Aluminum-Gallium
Arsenide anode enhanced, SPST Non-Reflective PIN diode
switch. AlGaAs anodes, which utilize M/A-COM’s patent
pending hetero-junction technology, produce less loss than
conventional GaAs processes, by as much as a 0.3 dB
reduction in insertion loss at 50 GHz. These devices are
fabricated on a OMCVD eptaxial wafer using a process
designed for high device uniformity and extremely low
parasitics. The diodes themselves exhibit lower series
resistance, lower capacitance, and faster switching speeds
than Silicon based devices. They are fully passivated with
silicon nitride and have an additional layer of a polymer for
scratch protection. The protective coating prevents damage to
the junction and the anode airbridges during handling. Off-
chip bias circuitry is required and allows for maximum
design flexibility.
APPLICATIONS
The output port of this device ( J2 ), is 50 Ω terminated
during Isolation mode, which allows this signal to be
absorbed rather than reflected back. This functionality makes
it ideal for instrumentation and radar applications. This
absorptive switch can be added to available reflective
AlGaAs switches to improve isolation VSWR and increase
isolation magnitude.
The ultra low capacitance of the PIN diodes makes it ideal for
usage in lower loss and higher isolation microwave and
millimeter wave switch designs through 70 GHz. The lower
series resistance of the AlGaAs diodes reduces the total
insertion loss and distortion of the devices. These AlGaAs
PIN switches are used as the switching arrays for radar
systems, radiometers, and other multi-function components.
ABSOLUTE MAXIMUM RATINGS
@T_A = +25°C ( Unless otherwise specified )
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Assembly Temperature
Incident C.W. RF Power
Reverse Voltage
Forward Bias Current
MAXIMUM RATING
-55° TO +125°C
-65°C TO +150°C
+175°C
+300°C for < 10 sec
+23 dBm C.W.
| - 25 V |
+/-25 mA
Note: Exceeding ANY of these values may result in
permanent damage
Maximum Operating Conditions forCombination of
RF Power, D.C. Bias, and Temperature:
+ 23 dBm C.W. @ 10 mA ( per Diode ) @ + 85 °C.
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