MA4AGSW1 Datasheet, PDF (1/6 Pages) Tyco Electronics – AlGaAs SPST Reflective PIN Diode Switch

AlGaAs SPST Reflective
PIN Diode Switch
V 1.00
Features
n Ultra Broad Bandwidth: 50 MHz to 50 GHz
n Functional Bandwidth : 50 MHz to 70 GHz
n Dual shunt diode configuration
n 0.35 dB Insertion Loss, 46 dB Isolation at 50 GHz
n Low Current consumption:
-5 V for Low Loss State
+10 mA for Isolation State
n M/A-COM’s unique patent pending AlGaAs
hetero-junction anode technology
n Silicon Nitride Passivation
n Polymide Scratch protection
MA4AGSW1 Layout
Description
M/A-COM’s MA4AGSW1 is an Aluminum-Gallium-Arsenide
anode enhanced, SPST PIN diode switch. AlGaAs anodes,
which utilize M/A-COM’s patent pending hetero-junction
technology, produce less diode resistance than conventional GaAs
processes. These devices are fabricated on a OMCVD epitaxial
wafer using a process designed for high device uniformity and
extremely low parasitics. The diodes themselves exhibit low series
resistance, low capacitance, and extremely fast switching speed.
They are fully passivated with silicon nitride and have an
additional layer of a polymer for scratch protection. The protective
coating prevents damage to the junction and the anode air bridges
during handling. Off-chip bias circuitry is required and allows
maximum design flexibility.
Applications
The low capacitance of the PIN diodes used makes it ideal for use
in microwave and millimeter wave switch designs, where ultra low
insertion loss is required. The very high shunt conductance of the
diodes dramatically improves isolation at millimeter wave
frequencies. These AlGaAs PIN switches are used in switching
arrays for radar systems, high-speed ECM circuits, and millimeter
wave measurement instrumentation.
Absolute Maximum Ratings¹
@ TA = +25 °C (Unless otherwise
specified)
Parameter
Maximum Rating
Operating Temperature
-55 °C to +125 °C
Storage Temperature
-65 °C to +150 °C
Incident C.W. RF Power
+ 30 dBm @ -5 V
Reverse Voltage
25 V
Bias Current
30 mA per Diode
1. Exceeding any of these values may result in permanent
damage
Nominal Chip Dimensions
Chip
RF
J1
J2
Chip Dimensions (µm)
X
Y
780
650
Pad Dimensions (µm)
X
Y
100
100
Pad Locations (µm)
X
Y
0
0
+530
0
Pad Locations Relative to J1