MA08509D Datasheet, PDF (1/3 Pages) Tyco Electronics – 10W Power Amplifier Die Preliminary Release 8.0-11 GHz

10W Power Amplifier Die
(8.0-11 GHz)
FEATURES
• Broadband Performance
V DD
• 32% Typical Power Added Efficiency
• 50 Ω Input/Output Impedance
• Self-Aligned MSAG^® MESFET Process
RF IN
MA08509D
Preliminary Release
V DD
RF OUT
VGG
Description
The MA08509D is a three stage MMIC power
amplifier fabricated using M/A-COM’s mature
GaAs Self-Aligned MSAG^® MESFET Process.
This product is fully matched to 50 ohms on
both the input and the output.
Maximum Ratings (TA = 25 °C unless otherwise noted)
Rating
Symbol Value
DC Drain Supply Voltage
V_DD
12
DC Gate Supply Voltage
V_GG
-6
RF Input Power
P_IN
500
Junction Temperature
T_J
150
Storage Temperature
T_STG
-40 to
+85
Unit
Vdc
Vdc
mW
°C
°C
ELECTRICAL CHARACTERISTICS VDD = 10.0 V, VGG = -4 V, PIN = 18 dBm, TA = 25 °C
Characteristic
Symbol
Min
Frequency
ƒ
8.0
Output Power, saturated
P_SAT
39.0
Power Gain, saturated
Gain Flatness Over Frequency @ P_in = 18 dBm
G_SAT
20
-
Power Added Efficiency (POUT=PSAT)
PAE
25
Return Loss
S₁₁
Harmonics
Output Stage Thermal Resistance @ Pin = 18 dBm
2ƒ_ο, 3ƒ_ο
R_th
Typ
-
40
22
+/- 1.0
32
-6
-30
5.4
Max
11.0
41.5
-4
Unit
GHz
dBm
dB
dB
%
dB
dBc
°C/W
Specifications subject to change without notice.
North America: Tel. [phone], Fax [phone]
Asia/Pacific: Tel. [phone], Fax [phone]
Europe: Tel. [phone], Fax [phone]
Visit www.macom.com for additional data sheets and product information
902179 D