MA01502D_1 Datasheet, PDF (1/6 Pages) Tyco Electronics – X-Band Limiter/Low Noise Amplifier 8.5 -12.0 GHz

RO-P-DS-3002 - -
X-Band Limiter/Low Noise Amplifier
8.5 –12.0 GHz
Features
8.5-12.0 GHz GaAs MMIC Amplifier
♦ 8.5 to 12.0 GHz Operation
♦ 10 Watt CW On-chip Limiter
♦ Balanced Design –Excellent Return Loss
♦ Self-Aligned MSAG^® MESFET Process
Primary Applications
♦ Weather Radar
♦ Airborne Radar
Description
The MA01502D is a balanced 2-stage low noise ampli-
fier with on-chip, receiver protecting 10 Watt limiter. This
product is fully matched to 50 ohms on both the input
and output.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using M/
A-COM’s repeatable, high performance and highly reli-
able GaAs Multifunction Self-Aligned Gate (MSAG^®)
MESFET Process. This process features silicon nitride
passivation and polyimide scratch protection.
Electrical Characteristics: T_B = 25°C¹, Z₀ = 50Ω, V_DD = 5V, V_GG = -5V
Parameter
Symbol
Minimum
Typical
Bandwidth
f
8.5
-
Small Signal Gain
Gn
12
14
1-dB Compression Point
P1dB
20
Input Return Loss
IRL
13
20
Output Return Loss
ORL
13
20
Noise Figure
NF
2.7
Drain Current
I_DD
130
Gate Current
I_GG
4
Input Third Order Intercept Point
ITOI
13
Drain Current (Max at Pin= 10W)
I_DMAX
40+I_DD
Power Handling (CW up to 30 minutes)
P_RF
10
Maximum
12.0
18
3.5
160
10
Units
GHz
dB
dBm
dB
dB
dB
mA
mA
dBm
mA
W
1. T_B = MMIC Base Temperature