PINDIODESCHIP_15 Datasheet, PDF (7/7 Pages) M/A-COM Technology Solutions, Inc. – Silicon PIN Chips

Silicon PIN Chips
V20
Die Handling and Bonding Information
Handling: All semiconductor chips should be handled with care to avoid damage or contamination
from perspiration, salts, and skin oils. The use of plastic tipped tweezers or vacuum pickup is
strongly recommended for the handling and placing of individual components. Bulk handling should
ensure that abrasion and mechanical shock are minimized.
Die Attach Surface: Die can be mounted with an 80Au/Sn20, eutectic solder preform, RoHS
compliant solders or electrically conductive silver epoxy. The metal RF and D.C. ground plane
mounting surface must be free of contamination and should have a surface flatness of < ±0.002”.
Eutectic Die Attachment Using Hot Gas Die Bonder: A work surface temperature of 255^oC is
recommended. When hot forming gas (95%N/5%H) is applied, the work area temperature should be
approximately 290^oC. The chip should not be exposed to temperatures greater than 320^oC for more
than 10 seconds.
Eutectic Die Attachment Using Reflow Oven: For recommended reflow profile refer to pages 5-7
of Application Note 538 “Surface Mounting Instructions”,
Electrically Conductive Epoxy Die Attachment: A controlled amount of electrically conductive,
silver epoxy, approximately 1–2 mils in thickness, should be used to minimize ohmic and thermal
resistance. A thin epoxy fillet should be visible around the perimeter of the chip after placement to
ensure full area coverage. Cure conductive epoxy per manufacturer’s schedule. Typically 150°C for
1 hour.
Wire and Ribbon Bonding: The die anode bond pads have a Ti-Pt-Au metallization scheme, with a
final gold thickness of 1.0 micron. Thermo-compression or thermo-sonic wedge bonding of either
gold wire or ribbon is recommended. A bonder heat stage temperature setting of 200^oC, tool tip
temperature of 150°C and a force of 18 to 50 grams is suggested. Ultrasonic energy may also be
used but should be adjusted to the minimum amplitude required to achieve an acceptable bond.
Excessive energy may cause the anode metallization to separate from the chip. Automatic ball or
wedge bonding may also be used.
For more detailed handling and assembly instructions, see Application Note M541, “Bonding
and Handling Procedures for Chip Diode Devices”.
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is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
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Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.