PIN Datasheet, PDF (7/8 Pages) –

Silicon PIN Chips
Rev. V22
Die Handling and Bonding Information
Handling:
All semiconductor chips should be handled with care to avoid damage or contamination from perspiration, salts,
and skin oils. The use of plastic tipped tweezers or vacuum pickup is strongly recommended for the handling and
placing of individual components. Bulk handling should ensure that abrasion and mechanical shock are
minimized.
Die Attach Surface:
Die can be mounted with an 80Au/Sn20, eutectic solder preform, RoHS compliant solders or electrically
conductive silver epoxy. The metal RF and DC ground plane mounting surface must be free of contamination and
should have a surface flatness of < ±0.002”.
Eutectic Die Attachment Using Hot Gas Die Bonder:
A work surface temperature of 255^oC is recommended. When hot forming gas (95%N/5%H) is applied, the work
area temperature should be approximately 290^oC. The chip should not be exposed to temperatures greater than
320^oC for more than 10 seconds.
Eutectic Die Attachment Using Reflow Oven:
For recommended reflow profile refer to Application Note 538 “Surface Mounting Instructions”,
Electrically Conductive Epoxy Die Attachment:
A controlled amount of electrically conductive, silver epoxy, approximately 1 - 2 mils in thickness, should be used
to minimize ohmic and thermal resistance. A thin epoxy fillet should be visible around the perimeter of the chip
after placement to ensure full area coverage. Cure conductive epoxy per manufacturer’s schedule. Typically
150°C for 1 hour.
Wire and Ribbon Bonding:
The die anode bond pads have a Ti-Pt-Au metallization scheme, with a final gold thickness of 1.0 micron.
Thermo-compression or thermo-sonic wedge bonding of either gold wire or ribbon is recommended. A bonder
heat stage temperature setting of 200^oC, tool tip temperature of 150°C and a force of 18 to 50 grams is
suggested. Ultrasonic energy may also be used but should be adjusted to the minimum amplitude required to
achieve an acceptable bond. Excessive energy may cause the anode metallization to separate from the chip.
Automatic ball or wedge bonding may also be used.
For more detailed handling and assembly instructions, see Application Note M541, “Bonding and Handling
Procedures for Chip Diode Devices”.
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