PIN Datasheet, PDF (1/8 Pages) –

Silicon PIN Chips
Features
 Switch & Attenuator Die
 Extensive Selection of I-Region Lengths
 Hermetic
 Glass Passivated Cermachip
 Oxide Passivated Planar Chips
 Voltage Ratings to 3000 V
 Fast Switching Speed
 Low Loss
 High Isolation
 RoHS* Compliant
Description
MACOM offers a comprehensive line of low
capacitance, planar and mesa, silicon PIN diode
chips which use ceramic glass and silicon nitride
passivation technology. The silicon PIN chip series
of devices cover a broad spectrum of performance
requirements for control circuit applications. They
are available in several choices of I-region lengths
and have been optimally designed to minimize
parametric trade offs when considering low
capacitance, low series resistance, and high
breakdown voltages. Their small size and low
parasitics, make them an ideal choice for
broadband, high frequency, micro-strip hybrid
assemblies.
The attenuator line of PIN diode chips are a planar
or mesa construction and because of their thicker
I-regions and predictable R_S vs. I characteristics,
they are well suited for low distortion attenuator
and switch circuits. Incorporated in the chip’s
construction is MACOM’s, time proven, hard glass,
Cermachip process. The hard glass passivation
completely encapsulates the entire PIN junction area
resulting in a hermetically sealed chip which has
been qualified in many military applications. These
Cermachip diodes are available in a wide range of
voltages, up to 3,000 volts, which are capable of
controlling kilowatts of RF power.
Many of MACOM ’s silicon PIN diode chips are also available
in several different package styles. Please refer to the
“Packaged PIN Diode Datasheet” for case style availability
and electrical specifications located on the MACOM website.
Also for high voltage, high power devices refer to
MA4PK2000.
Rev. V22
Anode
Full Area Cathode
Absolute Maximum Ratings¹
T_A = +25°C (Unless otherwise specified)
Parameter
Absolute Maximum
Forward Current (I_F)
Per P/N R_s vs. I Graph
Reverse Voltage (V_R)
Power Dissipation (W)
Operating Temperature
Per Specification Table
175°C – T_ambient°C
Theta
-55°C to +175°C
Storage Temperature
-55°C to +200°C
Junction Temperature
+175°C
Mounting Temperature
+320°C for 10 seconds
1. Exceeding these limits may cause permanent damage to the
chip
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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