XB1008-BD_15 Datasheet, PDF (6/7 Pages) M/A-COM Technology Solutions, Inc. – Buffer Amplifier

XB1008-BD
Buffer Amplifier
10.0-21.0 GHz
Rev. V1
App Note [1] Biasing - The device provides variable gain with adjustable bias regulation. For optimum linearity
performance, it is recommended to bias this device at Vd=4V with Id=90 mA (Vg2 at approximately -0.5V and
Vg1 left open). It is also recommended to use active biasing to control the drain currents because this gives the
most reproducible results over temperature or RF level variations. Depending on the supply voltage available
and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational am-
plifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT
is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this
is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to se-
quence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement - For Individual Stage Bias (Recommended for saturated applications) -- Each
DC pad (Vd and Vg1,2) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possi-
ble. Additional DC bypass capacitance (~0.01 uF) is also recommended.
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