NPTB00004 Datasheet, PDF (6/10 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 5W RF Power Transistor

NPTB00004
Typical Device Characteristics
V_DS=28V, I_DQ=50mA, T_A=25°C unless otherwise noted.
Figure 13 - Power Derating Curve
Figure 14 - MTTF of NRF1 Devices as a
Function of Junction Temperature
Figure 15 - Quiescient Gate Voltage (V_GSQ)
Required to Reach I_DQ = 50mA as a
Function of Ambient Temperature
NPTB00004
Page 6
NDS-002 Rev 7, April 2013