NPTB00004 Datasheet, PDF (1/10 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 5W RF Power Transistor

NPTB00004
Gallium Nitride 28V, 5W RF Power Transistor
Built using the SIGANTIC^® NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for CW, pulsed, WiMAX, W-CDMA, LTE,
and other applications from DC to 6GHz
• 100% RF Tested at 2500MHz
• 5W P3dB CW Power
• 15.5dB Power Gain
• Low cost, surface mount SOIC package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to EAR99 Export Control
DC - 6000MHz
5 Watt, 28 Volt
GaN HEMT
2-Tone Specifications: V_DS = 28V, I_DQ = 50mA, Frequency = 2500MHz, Tone spacing = 1MHz, T_C = 25°C
Measured in Nitronex Test Fixture
Symbol
P_1dB,PEP
G_SS
P_IMD3
h
Parameter
Peak Envelope Power at 1dB Compression
Small Signal Gain
Peak Envelope Power at -35dBc IMD3
Drain Efficiency at 3dB Compression
Min
Typ
Max
5.0
7.5
-
14.5
15.5
-
-
2.5
-
55
60
-
Units
W
dB
W
%
RF Performance (CW): V_DS = 28V, I_DQ = 50mA, Frequency = 2500MHz, T_C = 25°C, Measured in Nitronex
Test Fixture
Symbol Parameter
Typ
P_3dB
Average Output Power at 3dB Compression
5.1
P_1dB
Average Output Power at 1dB Compression
2.9
h
Drain Efficiency at 3dB Compression
56
Units
W
W
%
OFDM Performance: V_DS = 28V, I_DQ = 100mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame
data, 3.5 MHz channel bandwidth. Peak/Avg. = 10.3dB @ 0.01% probability on CCDF. Frequency = 3500MHz, P_OUT,AVG =
24dBm, T_C = 25°C. Measured in Load Pull System
Symbol Parameter
Typ
Units
G_P
h
EVM
Power Gain
Drain Efficiency
Error Vector Magnitude
11.2
dB
9
%
1.0
%
NPTB00004
Page 1
NDS-002 Rev 7, April 2013