MAGX-003135-120L00_15 Datasheet, PDF (6/7 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC HEMT Pulsed Power Transistor

MAGX-003135-120L00
GaN on SiC HEMT Pulsed Power Transistor
120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Typical Performance Curves: V_DD = 50 V, I_DQ = 300 mA
Output Power / Drain Efficiency vs. Input Power (Pulse Width = 300 μs, Duty = 10%)
180
55
Rev. V2
150
50
120
90
45
3.1 GHz
3.3 GHz
40
3.5 GHz
3.1GHz
3.3GHz
3.5GHz
60
5
7
9
11
13
Input Power (W)
35
5
7
9
11
13
Input Power (W)
Output Power / Drain Efficiency vs. Input Power (Pulse Width = 100 μs, Duty = 10%)
180
55
150
50
120
45
90
60
5
3.1 GHz
3.3 GHz
3.5 GHz
7
9
11
13
Input Power (W)
40
35
5
3.1 GHz
3.3 GHz
3.5 GHz
7
9
11
13
Input Power (W)
Output Power / Drain Efficiency vs. Input Power (Pulse Width = 100 μs, Duty = 20%)
180
55
150
50
120
90
60
5
3.1 GHz
3.3 GHz
3.5 GHz
7
9
11
13
Input Power (W)
45
40
35
5
3.1 GHz
3.3 GHz
3.5 GHz
7
9
11
13
Input Power (W)
6
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