MAGX-003135-120L00_15 Datasheet, PDF (3/7 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC HEMT Pulsed Power Transistor

MAGX-003135-120L00
GaN on SiC HEMT Pulsed Power Transistor
120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Rev. V2
Absolute Maximum Ratings^1,2,3,4,5
Parameter
Limit
Input Power (P_IN)
Drain Supply Voltage (V_DD)
Gate Supply Voltage (V_GG)
Supply Current (I_DD)
Absolute Maximum Junction/Channel Temperature
42 dBm
+65 V
-8 to 0 V
6.7 A
200ºC
Pulsed Power Dissipation at 85 ºC
170 W (Pulse Width = 100 μs)
144 W (Pulse Width = 300 μs)
Operating Temperature
-40 to +95ºC
Storage Temperature
-65 to +150ºC
ESD Min. - Machine Model (MM)
50 V
ESD Min. - Human Body Model (HBM)
250 V
1. Exceeding any one or combination of these limits may cause permanent damage to this device.
2. MACOM does not recommend sustained operation near these survivability limits.
3. For saturated performance, the following is recommended: (3*V_DD + abs(V_GG)) <175 V.
4. Operating at nominal conditions with T_J ≤ +200°C will ensure MTTF > 1 x 10⁶ hours. Junction temperature directly affects device MTTF
and should be kept as low as possible to maximize lifetime.
5. Junction Temperature (T_J) = T_C + Ó¨_JC * ((V * I) - (P_OUT - P_IN)).
Typical Transient Thermal Resistances (I_DQ = 300 mA, 300 μs pulse, 10% duty cycle):
a) Freq. = 3.1 GHz, Ө_JC = 0.62C/W
T_J = 172C (T_C = 82C, 48 V, 5.34 A, P_OUT = 120 W, P_IN = 10.15 W)
b) Freq. = 3.3 GHz, Ө_JC = 0.69C/W
T_J = 183C (T_C = 83C, 48 V, 5.37 A, P_OUT = 120 W, P_IN = 7.50 W)
c) Freq. = 3.5 GHz, Ө_JC = 0.67C/W
T_J = 177C (T_C = 84C, 48 V, 5.25 A, P_OUT = 120 W, P_IN = 7.65 W)
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