NPTB00050_15 Datasheet, PDF (5/8 Pages) M/A-COM Technology Solutions, Inc. – 50W RF Power Transistor

NPTB00050
Not recommended for new designs
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Typical Device Characteristics
V_DS=28V, I_DQ=450mA, T_A=25°C unless otherwise noted.
Figure 4 - Power Derating Curve
Figure 5 - MTTF of NRF1 Devices as a
Function of Junction Temperature
NPTB00050
Figure 6 - Typical CW Performance vs. Temperature
in Nitronex Test Fixture,
V_DS = 28V, I_DQ = 450 mA, 3000MHz
Page 5
NDS-007 Rev 6, April 2013