NPTB00050_15 Datasheet, PDF (2/8 Pages) M/A-COM Technology Solutions, Inc. – 50W RF Power Transistor

NPTB00050
Not recommended for new designs
Contact [e-mail] for questions or support
DC Specifications: T_C = 25°C
Symbol Parameter
Off Characteristics
V_BDS
I_DLK
Drain-Source Breakdown Voltage
(V_GS = -8V, I_D = 16mA)
Drain-Source Leakage Current
(V_GS = -8V, V_DS = 60V)
On Characteristics
V_T
V_GSQ
R_ON
I_D
Gate Threshold Voltage
(V_DS = 28V, I_D = 16mA)
Gate Quiescent Voltage
(V_DS = 28V, I_D = 450mA)
On Resistance
(V_GS = 2V, I_D = 120mA)
Drain Current
(V_DS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, V_GS = 2V)
Min
Typ
Max
Units
100
-
-
0.1
-
V
16
mA
-2.3
-1.8
-1.3
V
-2.0
-1.5
-1.0
V
-
0.25
0.40
W
9.2
9.8
-
A
Absolute Maximum Ratings: Not simultaneous, T_C = 25°C unless otherwise noted
Symbol Parameter
V_DS
V_GS
I_G
P_T
q_JC
T_STG
T_J
HBM
MM
Drain-Source Voltage
Gate-Source Voltage
Gate Current
Total Device Power Dissipation (Derated above 25°C)
Thermal Resistance (Junction-to-Case)
Storage Temperature Range
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
Max
Units
100
V
-10 to 3
V
80
mA
55
W
3.2
°C/W
-65 to 150
°C
200
°C
1B (>500V)
M2 (>100V)
NPTB00050
Page 2
NDS-007 Rev 6, April 2013