MA4SW510 Datasheet, PDF (5/7 Pages) Tyco Electronics – SP5T PIN Diode Reflective Switch

MA4SW510
HMIC™ Silicon SP5T PIN Diode Switch
RoHS Compliant
V5
Operation of the MA4SW510 Switch
The simultaneous application of a negative DC current to the low loss port and positive DC current to the isolated
ports as shown below in Fig.1 is required for proper operation of the switch. The backside area of the die is the
RF and DC ground return and the DC return is through the common Port J1. A constant current source should be
used to supply the DC control currents. The control voltages at these points will not exceed ±1.5 volts for supply
currents up to ±20mA. In the low loss state, the series diode must be forward biased and the shunt diode reverse
biased. On all isolated ports, the shunt diode is forward biased and the series diode is reverse biased. A typical
bias network design that will produce >30dB RF to DC isolation is shown below in Figure 1 .
The optimum insertion loss, P1dB, IP3, and switching speed are attained by using a voltage pull-up resistor in the
DC return path, J1. A minimum value of |-2V| is recommended using a standard, ± 5V TTL controlled PIN driver
such as M/A-COM Tech’s MADR-007097-000100 & MADR-009190-000100 used in tandem.
Typical 2 – 18 GHz Bias Network
J1
39 pF
100 Ω
22 pF
22 nH
DC Bias (± 1.2V typ.)
39 pF
J6
MA4SW510 Die
22 nH
J2
22 pF
J5
J4
J3
Fig. 1
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