MA4AGSW2 Datasheet, PDF (5/7 Pages) Tyco Electronics – AlGaAs SP2T PIN Diode Switch

MA4AGSW2
SPDT AlGaAs PIN Diode Switch
RoHS Compliant
Rev. V4
Operation of the MA4AGSW2 Switch
The simultaneous application of a negative DC current to the low loss port and positive DC current to the
remaining isolated switching port is required for the operation of the MA4AGSW2, AlGaAs, PIN switch. The
backside area of the die is the RF and DC return ground plane. The DC return is connected to the common port
J1. The forward bias voltage at J2 & J3 will not exceed ±1.6 volts and is typically ± 1.4 volts with supply current of
± 30mA). In the low loss state, the series diode must be forward biased and the shunt diode reverse biased. While
for the Isolated port, the shunt diode is forward biased and the series diode is reverse biased. The bias network
design shown below should yield > 30 dB RF to DC Isolation.
The lowest insertion loss, P1dB, IP³, and switching speed is achieved by using a voltage pull-up resistor in the DC
return path, (J1). A minimum value of | -2V | is recommended at this return node, which is achievable with a
standard, ± 5V TTL Controlled PIN Diode Driver.
MA4AGSW2 Schematic with a Typical External 2-18 GHz Bias Network
TYPICAL DRIVER CONNECTIONS
CONTROL LEVEL (DC CURRENT)
J2
J3
-10mA
+10mA
+10mA
-10mA
RF OUTPUT STATE
J2-J1
J3-J1
Low Loss
Isolation
Isolation
Low Loss
5
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