MA4AGSW1 Datasheet, PDF (5/7 Pages) Tyco Electronics – AlGaAs SPST Reflective PIN Diode Switch

MA4AGSW1
SPST Reflective AlGaAs PIN Diode Switch
Rev. V3
Operation of the MA4AGSW1 Switch
The application of 0V or a negative DC voltage to either J1 or J2 provides insertion loss for the MA4AGSW1
SPST reflective switch. Isolation is achieved with +10 mA total D.C. current. The forward bias voltage at the
diode bias node is typically 1.4 volts for supply currents up to +30 mA and will not exceed 1.6 volts. The
backside area of the die is the RF and DC return ground plane. The bias network design should yield >30 dB
RF to DC isolation.
Best insertion loss, P1dB, IP3, and switching speed are achieved by applying a minimum value of | -2V | at
the D.C. bias node. This may be achieved using a standard, 5V, TTL controlled, PIN diode driver.
MA4AGSW1 Schematic with 2-18 GHz Bias Network
Note: The bias network can be connected to either J1 or J2
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