NPT25015_15 Datasheet, PDF (4/8 Pages) M/A-COM Technology Solutions, Inc. – 23W RF Power Transistor

NPT25015
Load-Pull Data, Reference Plane at Device Leads
V_DS=28V, I_DQ=200mA, T_A=25°C unless otherwise noted
Figure 2 - Typical OFDM Performance
at 2500MHz and 28V versus I_DQ
Typical Device Characteristics
V_DS=28V, I_DQ=200mA, T_A=25°C unless otherwise noted
Figure 3 - P_3dB,PEP and Drain Efficiency
versus Temperature at 2500MHz, Application Board
Figure 4 - Power Derating Curve
NPT25015
Page 4
Figure 5 - MTTF of NRF1 devices as a
function of junction temperature
NDS-004 Rev 4, April 2013