NPT25015_15 Datasheet, PDF (1/8 Pages) M/A-COM Technology Solutions, Inc. – 23W RF Power Transistor

NPT25015
Gallium Nitride 28V, 23W RF Power Transistor
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for CW, pulsed, WiMAX, and other
applications from DC - 3000 MHz
• 23W P3dB peak envelope power (PEP)
• 1.5W linear power @ 2% EVM for single carrier
OFDM, 10.3dB peak/average,
3.5MHz channel bandwidth, 14dB gain,
23.5% efficiency, 2500-2700MHz
• 100% RF tested
• Thermally-enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to EAR99 export control
DC - 3000 MHz
23 Watt, 28 Volt
GaN HEMT
Typical 2-Tone Performance: V_DS = 28V, I_DQ = 200mA, Frequency = 2500MHz, Tone Spacing = 1.0MHz, T_C = 25°C
Measured in Nitronex Test Fixture
Symbol
P_3dB,PEP
P_1dB,PEP
G_SS
h
Parameter
Peak Envelope Power at 3dB Compression
Peak Envelope Power at 1dB Compression
Small Signal Gain
Drain Efficiency at 3dB Compression
Min
20
-
13.0
53
Typ
25
15
14.0
58
Max
-
-
15.0
-
Units
W
W
dB
%
Typical OFDM Performance: V_DS = 28V, I_DQ = 200mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst,
continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF. Frequency =
2500 - 2700MHz. P_OUT,AVG = 1.5W, T_C = 25°C. Measured in Load Pull System (Refer to Table 1 and Figure 1)
Symbol
G_P
h
EVM
Parameter
Power Gain
Drain Efficiency
Error Vector Magnitude
Typ
14.0
23.5
2.0
Units
dB
%
%
NPT25015
Page 1
NDS-004 Rev 4, April 2013