NPA1006 Datasheet, PDF (4/13 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Power Amplifier, 28 V, 12.5 W

NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Characterization Circuit and Recommended Tuning Solution
100 - 1000 MHz Broadband
Rev. V2
V_GS
C1
10 mF
C2
R1
0.01 mF 49.9 W
RF
In
C4
2400 pF
L2
5.4 nH
NPA1006
L1
0.9 mH
C3
4.7 mF
V_DS
C5
C6
4.7 pF 2400 pF
RF
Out
Description
Parts measured on the characterization board
(20-mil thick RO4350). The PCB’s electrical and
thermal ground is provided using a standard-plated
densely packed via hole array (see recommended
via pattern).
Bias Sequencing
Turning the device ON
1. Set V_GS to the pinch-off (V_P), typically -5 V.
2. Turn on V_DS to nominal voltage (28 V).
3. Increase V_GS until the I_DS current is reached.
4. Apply RF power to desired level.
Matching is provided using a combination of lumped
elements and transmission lines as shown in the
simplified schematic above. Recommended tuning
solution component placement, transmission lines,
and details are shown on the next page.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V_GS down to V_P.
3. Decrease V_DS down to 0 V.
4. Turn off V_GS.
Recommended Via Pattern (All dimensions shown as inches)
4
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