NPA1006 Datasheet, PDF (2/13 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Power Amplifier, 28 V, 12.5 W

NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
RF Electrical Specifications:
T_C = 25°C , V_DS = 28 V, I_DQ = 88 mA, 100 - 1000 MHz Broadband Characterization Circuit
Parameter
Test Conditions
Symbol Min. Typ. Max. Units
Small Signal Gain
CW, 900 MHz
G_SS
-
15.0
-
dB
Gain
CW, P_OUT = 41 dBm, 900 MHz
G_P
12.5
14.0
-
dB
Saturated Output Power
CW, 900 MHz
P_SAT
-
42.9
-
dBm
Drain Efficiency
Power Added Efficiency
Drain Efficiency
CW, P_OUT = 41 dBm, 900 MHz
η_D
61
65
-
%
CW, P_OUT = 41 dBm, 900 MHz
PAE
57.5 62.4
-
%
CW, 900 MHz
η_DSAT
-
70
-
%
Drain Voltage (V_DS)
Ruggedness
Drain Voltage
All phase angles
V_DS
-
28
-
V

VSWR = 15:1, No Device Damage
DC Electrical Specifications: T_C = 25°C
Parameter
Test Conditions
Symbol
Drain-Source Leakage Current
V_GS = -8 V, V_DS = 100 V
I_DLK
Gate-Source Leakage Current
V_GS = -8 V, V_DS = 0 V
I_GLK
Gate Threshold Voltage
V_DS = 28 V, I_D = 6 mA
V_T
Gate Quiescent Voltage
V_DS = 28 V, I_D = 88 mA
V_GSQ
On Resistance
V_DS = 2 V, I_D = 45 mA
R_ON
Saturated Drain Current
V_DS = 7 V pulsed, pulse width 300 µs I_D(SAT)
Min.
-
-
-2.5
-2.1
-
-
Typ.
6
3
-1.5
-1.2
0.8
3.5
Max.
-
-
-0.5
-0.3
-
-
Units
mA
mA
V
V
Ω
A
2
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