MAGX-001214-250L00-PROD Datasheet, PDF (4/6 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC HEMT Pulsed Power Transistor

MAGX-001214-250L00
GaN on SiC HEMT Pulsed Power Transistor
250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty
RF Power Transfer Curve (Output Power Vs. Input Power)
300
Production V1
18 Aug 11
250
200
1200 MHz
1300 MHz
1400 MHz
150
100
50
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Pin (W)
RF Power Transfer Curve (Drain Efficiency Vs. Output Power)
70
65
60
55
1200 MHz
1300 MHz
50
1400 MHz
45
40
35
100
125
150
175
200
225
250
275
300
Pout (W)
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
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